Optical thermometry based on level anticrossing in silicon carbide
Optical thermometry based on level anticrossing in silicon carbide
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Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publisher
London: Nature Publishing Group UK
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Scope and Contents
Contents
We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field...
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Full title
Optical thermometry based on level anticrossing in silicon carbide
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Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5022017
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5022017
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep33301
