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Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5062469

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

About this item

Full title

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Publisher

London: Nature Publishing Group UK

Journal title

Scientific reports, 2016-10, Vol.6 (1), p.35217-35217, Article 35217

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength ra...

Alternative Titles

Full title

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5062469

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5062469

Other Identifiers

ISSN

2045-2322

E-ISSN

2045-2322

DOI

10.1038/srep35217

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