Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
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Publisher
London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga
1−x
Mn
x
N/GaN(template) bilayers of various Mn concentration
x
. It is shown that the Fermi level...
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Full title
Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5288782
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5288782
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep41877
