Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function...
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
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Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
We demonstrated that a flat band voltage (
V
FB
) shift could be controlled in TiN/(LaO or ZrO)/SiO
2
stack structures. The V
FB
shift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO
2
interface layer. The metal doping and silicate formation confirmed by using...
Alternative Titles
Full title
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
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Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5333133
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5333133
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep43561
