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High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6172237

High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

About this item

Full title

High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

Publisher

London: Nature Publishing Group UK

Journal title

Scientific reports, 2018-10, Vol.8 (1), p.14794-8, Article 14794

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

High-
k
dielectrics, materials having a large band gap (
E
g
) and high dielectric constant (
k
) simultaneously, constitute critical components in microelectronic devices. Because of the inverse relationship between
E
g
and
k
, materials with large values in both properties are rare. Therefore, massive databases...

Alternative Titles

Full title

High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6172237

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6172237

Other Identifiers

ISSN

2045-2322

E-ISSN

2045-2322

DOI

10.1038/s41598-018-33095-6

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