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Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mi...

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mi...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6888560

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method

About this item

Full title

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method

Publisher

Basel: MDPI AG

Journal title

Materials, 2019-11, Vol.12 (22), p.3670

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

This report systematically investigates the influence of different carrier gases (O2, N2, and air) on the growth of gallium oxide (Ga2O3) thin films on c-plane sapphire substrates by using the mist-CVD method. Although XRD and Raman measurements show that the pure corundum-structured α-Ga2O3 with single (0006) plane orientation was successfully obt...

Alternative Titles

Full title

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6888560

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6888560

Other Identifiers

ISSN

1996-1944

E-ISSN

1996-1944

DOI

10.3390/ma12223670

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