Investigation on energy bandgap states of amorphous SiZnSnO thin films
Investigation on energy bandgap states of amorphous SiZnSnO thin films
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Full title
Author / Creator
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publisher
London: Nature Publishing Group UK
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Scope and Contents
Contents
The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (
O
p
). The systematic change in
O
p
during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As
O
p
increased, the electrical...
Alternative Titles
Full title
Investigation on energy bandgap states of amorphous SiZnSnO thin films
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Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6917747
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6917747
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-019-55807-2
