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Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistanc...

Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistanc...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6926034

Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain

About this item

Full title

Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain

Publisher

Washington: National Academy of Sciences

Journal title

Proceedings of the National Academy of Sciences - PNAS, 2019-12, Vol.116 (51), p.25524-25529

Language

English

Formats

Publication information

Publisher

Washington: National Academy of Sciences

More information

Scope and Contents

Contents

Strain describes the deformation of a material as a result of applied stress. It has been widely employed to probe transport properties of materials, ranging from semiconductors to correlated materials. In order to understand, and eventually control, transport behavior under strain, it is important to quantify the effects of strain on the electroni...

Alternative Titles

Full title

Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6926034

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6926034

Other Identifiers

ISSN

0027-8424

E-ISSN

1091-6490

DOI

10.1073/pnas.1910695116

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