Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Techni...
Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique
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Publisher
Switzerland: MDPI AG
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Language
English
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Switzerland: MDPI AG
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Cadmium–magnesium–telluride (CdMgTe) crystal was regarded as a potential semiconductor material. In this paper, an indium-doped Cd0.95Mg0.05Te ingot with 30 mm diameter and 120 mm length grown by a modified Bridgman method with excess Te condition was developed for room temperature gamma-ray detection. Characterizations revealed that the as-grown C...
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Full title
Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6947041
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6947041
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ISSN
1996-1944
E-ISSN
1996-1944
DOI
10.3390/ma12244236
