Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis...
Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers
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Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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Contents
In this study, we grew homoepitaxial layers on 3-inch on-axis carbon-face 4H-silicon carbide substrates and attempted to suppress the generation of 3C-inclusions. It was found that the 3C-inclusion density decreased with increasing time spent on reaching an objective flow rate for the precursors. It is suggested that 3C-SiC nucleation occurred on l...
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Full title
Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_7663319
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_7663319
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ISSN
1996-1944
E-ISSN
1996-1944
DOI
10.3390/ma13214818
