Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films
Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films
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Publisher
Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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Scope and Contents
Contents
In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties an...
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Full title
Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films
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Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9000141
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9000141
Other Identifiers
ISSN
1996-1944
E-ISSN
1996-1944
DOI
10.3390/ma15072417
