Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers...
Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers under Varying Reactive Gas Conditions
About this item
Full title
Author / Creator
Publisher
Basel: MDPI AG
Journal title
Language
English
Formats
Publication information
Publisher
Basel: MDPI AG
Subjects
More information
Scope and Contents
Contents
In a single process run, an amorphous silicon oxynitride layer was grown, which includes the entire transition from oxide to nitride. The variation of the optical properties and the thickness of the layer was characterized by Spectroscopic Ellipsometry (SE) measurements, while the elemental composition was investigated by Energy Dispersive Spectros...
Alternative Titles
Full title
Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers under Varying Reactive Gas Conditions
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9506354
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9506354
Other Identifiers
ISSN
1996-1944
E-ISSN
1996-1944
DOI
10.3390/ma15186313
