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Effect of annealing on the kinetic properties and band parameters of Hg1−x−yCdxEuySe semiconductor c...

Effect of annealing on the kinetic properties and band parameters of Hg1−x−yCdxEuySe semiconductor c...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_springer_journals_10_1134_S1063782614120100

Effect of annealing on the kinetic properties and band parameters of Hg1−x−yCdxEuySe semiconductor crystals

About this item

Full title

Effect of annealing on the kinetic properties and band parameters of Hg1−x−yCdxEuySe semiconductor crystals

Publisher

Moscow: Pleiades Publishing

Journal title

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1680-1684

Language

English

Formats

Publication information

Publisher

Moscow: Pleiades Publishing

More information

Scope and Contents

Contents

The results of studies of the kinetic properties of Hg
1 −
x

y
Cd
x
Eu
y
Se semiconductor crystals in the ranges of temperatures
T
= 77–300 K and magnetic fields
H
= 0.5–5 kOe before and after heat treatment of the samples in Se vapors are reported. It is established that annealing of the samples in Se vapor...

Alternative Titles

Full title

Effect of annealing on the kinetic properties and band parameters of Hg1−x−yCdxEuySe semiconductor crystals

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_springer_journals_10_1134_S1063782614120100

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_springer_journals_10_1134_S1063782614120100

Other Identifiers

ISSN

1063-7826

E-ISSN

1090-6479

DOI

10.1134/S1063782614120100

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