Isolated electron spins in silicon carbide with millisecond coherence times
Isolated electron spins in silicon carbide with millisecond coherence times
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Scope and Contents
Contents
Optically detected magnetic resonance experiments show that single spins having a coherence time on the millisecond scale can be isolated in divacancy defects in silicon carbide at low temperature.
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries
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Full title
Isolated electron spins in silicon carbide with millisecond coherence times
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Record Identifier
TN_cdi_swepub_primary_oai_DiVA_org_liu_114989
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_swepub_primary_oai_DiVA_org_liu_114989
Other Identifiers
ISSN
1476-1122,1476-4660
E-ISSN
1476-4660
DOI
10.1038/nmat4144
