A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verific...
A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verification by LDMOS
About this item
Full title
Author / Creator
Publisher
Boston: Springer US
Journal title
Language
English
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Publication information
Publisher
Boston: Springer US
Subjects
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Scope and Contents
Contents
A simulation technique is developed in TCAD to study the non-linear behavior of
RF
power transistor. The technique is based on semiconductor transport equations to swot up the overall non-linearity’s occurring in
RF
power transistor. Computational load-pull simulation technique (CLP) developed in our group, is further extended to study...
Alternative Titles
Full title
A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verification by LDMOS
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Primary Identifiers
Record Identifier
TN_cdi_swepub_primary_oai_DiVA_org_liu_61593
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_swepub_primary_oai_DiVA_org_liu_61593
Other Identifiers
ISSN
1569-8025,1572-8137
E-ISSN
1572-8137
DOI
10.1007/s10825-010-0307-x
