Dynamics of SiO 2 Buried Layer Removal from Si-SiO 2 -Si and Si-SiO 2 -SiC Bonded Substrates by Anne...
Dynamics of SiO 2 Buried Layer Removal from Si-SiO 2 -Si and Si-SiO 2 -SiC Bonded Substrates by Annealing in Ar
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English
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Silicon-on-silicon-carbide substrates could be ideal for high-power and radiofrequency silicon devices. Such hybrid wafers, when made by wafer bonding, contain an intermediate silicon dioxide layer with poor thermal characteristics, which can be removed by high-temperature annealing in an inert atmosphere. To understand the dynamics of this process...
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Dynamics of SiO 2 Buried Layer Removal from Si-SiO 2 -Si and Si-SiO 2 -SiC Bonded Substrates by Annealing in Ar
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TN_cdi_swepub_primary_oai_DiVA_org_uu_209754
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_swepub_primary_oai_DiVA_org_uu_209754
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1543-186X,0361-5235
DOI
10.1007/s11664-013-2861-z
