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Books
Women on the case / edited by Sara Paretsky.
Publisher:New York : Delacorte Press, c1996.
Call Numbers:N813.0872/4
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ArticlesPeer ReviewedFull Text
Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging
Author / Creator:Davtyan, Arman ; Biermanns, Andreas ; Loffeld, Otmar ; Pietsch, Ullrich
Publisher:Bristol: IOP Publishing
Journal title:New journal of physics, 2016-06, Vol.18 (6), p.63021
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ArticlesPeer ReviewedFull Text
Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
Publisher:Heidelberg: Springer Nature B.V
Journal title:Nanoscale research letters, 2012-02, Vol.7 (1), p.109
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ArticlesPeer ReviewedFull Text
X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B
Author / Creator:Davydok, Anton ; Biermanns, Andreas ; Pietsch, Ullrich ; Grenzer, Jörg ; Paetzelt, Hendrik ; Gottschalch, Volker
Publisher:Boston: Springer US
Journal title:Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2010-05, Vol.41 (5), p.1191-1195
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ArticlesPeer ReviewedFull Text
X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B : Neutron and X-Ray Studies of Advanced Materials
Author / Creator:DAVYDOK, Anton ; BIERMANNS, Andreas ; PIETSCH, Ullrich ; GRENZER, Jörg ; PAETZELT, Hendrik ; GOTTSCHALCH, Volker
Publisher:New York, NY: Springer
Journal title:Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2010, Vol.41 (5), p.1191-1195
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ReviewsFull Text
Michael H. Brauer/Klaus-Dieter Steffen/Sven Biermann/Andreas H. Schuler Compliance Intelligence -- Praxisorientierte Lösungsansätze für die risikobewusste Unternehmensführung: Schäffer-Poeschel Stuttg...
Author / Creator:Kleinschmit, Fabian
Publisher:Wiesbaden: Springer Nature B.V
Journal title:Controlling & management review, 2009, Vol.53 (4), p.261
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Women on the case / edited by Sara Paretsky.

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Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

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Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

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X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B

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X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B : Neutron and X-Ray Studies of Advanced Materials

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Michael H. Brauer/Klaus-Dieter Steffen/Sven Biermann/Andreas H. Schuler Compliance Intelligence -- Praxisorientierte Lösungsansätze für die risikobewusste Unternehmensführung: Schäffer-Poeschel Stuttg...

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