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Books
인간의나무 / 패트릭화이트지음 ; 김용철옮김.
In'gan ŭi namu / P'aet'ŭrik Hwait'ŭ chiŭm ; Kim Yong-ch'ŏl omgim.
Author / Creator:White, Patrick, 1912-1990.
Publisher:Sŏul-si : Ŭryu Munhwasa, 1992. | 서울시 : 을유문화사, 1992.
Edition:Ch'op'an. | 초판.
Date:1992.
Call Numbers:823.3/W587/2 SET , N823.914/W587/73 SET
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Segye yŏksa rŭl twihŭndŭn kŭmyung iyagi : ingan ŭi yokmang ŭl umjiginŭn hwapye ŭi yŏksa / Wang Wei chiŭm ; Chŏng Yŏng-sŏn omgim.
Author / Creator:Wang, Wei.
Publisher:Sŏul : P'yŏngdan, 2015.
Call Numbers:KOR/332/WAN
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Human decency / Gong Ji Young ; translated by Bruce ... Fulton ... [et al.].
Author / Creator:Kong, Chi-yŏng, 1963-
Publisher:Seoul : Jimoondang Pub. Co., c2006.
Call Numbers:N895.7/3
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투명인간 에미 / 테리 리벤슨 ; 황소연 옮김
T'umyŏngin'gan Emi / T'e-ri Ribensŭn ; Hwang So-yŏn omgim.
Author / Creator:Libenson, Terri, 1970-, author. | 리벤슨, 테리, 1970-, author
Publisher:Sŏul-si : Piryongso, 2019.
Edition:1-p'an.
Call Numbers:KOR/J/00952
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Books
The blue laser diode : GaN based light emitters and lasers / Shuji Nakamura, Gerhard Fasol.
Author / Creator:Nakamura, Shuji, 1954-
Publisher:Berlin ; New York : Springer, c1997.
Call Numbers:N621.366/72
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ArticlesPeer ReviewedFull Text
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
Author / Creator:Cheng, Liwen ; Li, Zhenwei ; Zhang, Jiayi ; Lin, Xingyu ; Yang, Da ; Chen, Haitao ; Wu, Shudong ; Yao, Shun
Publisher:Basel: MDPI AG
Journal title:Nanomaterials (Basel, Switzerland), 2021-08, Vol.11 (8), p.2070
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ArticlesPeer ReviewedFull Text
Highly efficient blue InGaN nanoscale light-emitting diodes
Author / Creator:Sheen, Mihyang ; Ko, Yunhyuk ; Kim, Dong-uk ; Kim, Jongil ; Byun, Jin-ho ; Choi, YongSeok ; Ha, Jonghoon ; Yeon, Ki Young ; Kim, Dohyung ; Jung, Jungwoon ; Choi, Jinyoung ; Kim, Ran ; Yoo, Jewon ; Kim, Inpyo ; Joo, Chanwoo ; Hong, Nami ; Lee, Joohee ; Jeon, Sang Ho ; Oh, Sang Ho ; Lee, Jaekwang ; Ahn, Nari ; Lee, Changhee
Publisher:London: Nature Publishing Group UK
Journal title:Nature (London), 2022-08, Vol.608 (7921), p.56-61
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ArticlesPeer ReviewedFull Text
Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
Author / Creator:Wang, Qi ; Yuan, Guodong ; Liu, Wenqiang ; Zhao, Shuai ; Liu, Zhiqiang ; Chen, Yu ; Wang, Junxi ; Li, Jinmin
Publisher:New York: Springer US
Journal title:Journal of materials science, 2019-05, Vol.54 (10), p.7780-7788
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ArticlesPeer ReviewedFull Text
Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses
Author / Creator:Park Jinjoo ; Choi, Jun Hee ; Kong Kiho ; Han, Joo Hun ; Park, Jung Hun ; Kim Nakhyun ; Lee, Eunsung ; Kim, Dongho ; Kim, Joosung ; Chung Deukseok ; Shinae, Jun ; Kim, Miyoung ; Yoon Euijoon ; Shin Jaikwang ; Hwang Sungwoo
Publisher:London: Nature Publishing Group
Journal title:Nature photonics, 2021-06, Vol.15 (6), p.449-455
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ArticlesPeer ReviewedFull Text
InGaN multiquantum wells—problem of carrier injection
Author / Creator:Bojarska-Cieślińska, Agata ; Marona, Łucja ; Grzanka, Szymon ; Grzanka, Ewa ; Perlin, Piotr
Publisher:London: Nature Publishing Group UK
Journal title:Scientific reports, 2025-01, Vol.15 (1), p.2902-16, Article 2902
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ArticlesPeer ReviewedFull Text
Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates
Author / Creator:Lim, Norleakvisoth ; Chan, Philip ; Chang, Hsun–Ming ; Rienzi, Vincent ; Gordon, Michael J. ; Nakamura, Shuji
Publisher:Hoboken: John Wiley & Sons, Inc
Journal title:Advanced photonics research, 2023-03, Vol.4 (3), p.n/a
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ArticlesPeer ReviewedFull Text
Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range
Author / Creator:Jiang, Yang ; Li, Yangfeng ; Li, Yueqiao ; Deng, Zhen ; Lu, Taiping ; Ma, Ziguang ; Zuo, Peng ; Dai, Longgui ; Wang, Lu ; Jia, Haiqiang ; Wang, Wenxin ; Zhou, Junming ; Liu, Wuming ; Chen, Hong
Publisher:London: Nature Publishing Group UK
Journal title:Scientific reports, 2015-06, Vol.5 (1), p.10883, Article 10883
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ArticlesPeer ReviewedFull Text
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
Author / Creator:Sun, Yi ; Zhou, Kun ; Sun, Qian ; Liu, Jianping ; Feng, Meixin ; Li, Zengcheng ; Zhou, Yu ; Zhang, Liqun ; Li, Deyao ; Zhang, Shuming ; Ikeda, Masao ; Liu, Sheng ; Yang, Hui
Publisher:London: Nature Publishing Group UK
Journal title:Nature photonics, 2016-09, Vol.10 (9), p.595-599
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ArticlesPeer ReviewedFull Text
Study on the effect of size on InGaN red micro-LEDs
Author / Creator:Horng, Ray-Hua ; Ye, Chun-Xin ; Chen, Po-Wei ; Iida, Daisuke ; Ohkawa, Kazuhiro ; Wu, Yuh-Renn ; Wuu, Dong-Sing
Publisher:London: Nature Publishing Group UK
Journal title:Scientific reports, 2022-01, Vol.12 (1), p.1324-7, Article 1324
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ArticlesPeer ReviewedFull Text
Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers
Author / Creator:Staszczak, Grzegorz ; Gorczyca, Iza ; Grzanka, Ewa ; Smalc-Koziorowska, Julita ; Targowski, Grzegorz ; Suski, Tadeusz
Publisher:Switzerland: MDPI AG
Journal title:Materials, 2023-11, Vol.16 (23), p.7386
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ArticlesPeer ReviewedFull Text
Complete composition tunability of InGaN nanowires using a combinatorial approach
Author / Creator:Kuykendall, Tevye ; Ulrich, Philipp ; Aloni, Shaul ; Yang, Peidong
Publisher:London: Nature Publishing Group UK
Journal title:Nature materials, 2007-12, Vol.6 (12), p.951-956
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ArticlesPeer ReviewedFull Text
Etching-free pixel definition in InGaN green micro-LEDs
Author / Creator:Liu, Zhiyuan ; Lu, Yi ; Cao, Haicheng ; Maciel Garcia, Glen Isaac ; Liu, Tingang ; Tang, Xiao ; Xiao, Na ; Aguileta Vazquez, Raul ; Nong, Mingtao ; Li, Xiaohang
Publisher:London: Springer Nature B.V
Journal title:Light, science & applications, 2024-05, Vol.13 (1), p.117
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ArticlesPeer ReviewedFull Text
Transport Properties of InGaN Channel-Based Heterostructures with GaN Interlayers
Author / Creator:Li, Yao ; Li, Qun ; Zhang, Chao ; Pu, Hongbin ; Zhang, Yachao ; Zhang, Jincheng ; Hao, Yue
Publisher:New York: Springer US
Journal title:Journal of electronic materials, 2024-02, Vol.53 (2), p.1105-1115
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ArticlesPeer ReviewedFull Text
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density
Publisher:Heidelberg: Springer Nature B.V
Journal title:Nanoscale research letters, 2021-06, Vol.16 (1), p.99
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ArticlesPeer ReviewedFull Text
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
Author / Creator:Kotani, Junji ; Makiyama, Kozo ; Ohki, Toshihiro ; Ozaki, Shiro ; Okamoto, Naoya ; Minoura, Yuichi ; Sato, Masaru ; Nakamura, Norikazu ; Miyamoto, Yasuyuki
Publisher:Stevenage: John Wiley & Sons, Inc
Journal title:Electronics letters, 2023-02, Vol.59 (4), p.n/a
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In'gan ŭi namu / P'aet'ŭrik Hwait'ŭ chiŭm ; Kim Yong-ch'ŏl omgim.

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Segye yŏksa rŭl twihŭndŭn kŭmyung iyagi : ingan ŭi yokmang ŭl umjiginŭn hwapye ŭi yŏksa / Wang Wei chiŭm ; Chŏng Yŏng-sŏn omgim.

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Human decency / Gong Ji Young ; translated by Bruce ... Fulton ... [et al.].

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T'umyŏngin'gan Emi / T'e-ri Ribensŭn ; Hwang So-yŏn omgim.

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The blue laser diode : GaN based light emitters and lasers / Shuji Nakamura, Gerhard Fasol.

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Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

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Highly efficient blue InGaN nanoscale light-emitting diodes

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Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

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Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses

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InGaN multiquantum wells—problem of carrier injection

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Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates

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Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

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Study on the effect of size on InGaN red micro-LEDs

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Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

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Complete composition tunability of InGaN nanowires using a combinatorial approach

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Etching-free pixel definition in InGaN green micro-LEDs

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Transport Properties of InGaN Channel-Based Heterostructures with GaN Interlayers

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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

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