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ArticlesPeer ReviewedFull Text
Long-read sequencing identifies the pathogenic nucleotide repeat expansion in RFC1 in a Japanese case of CANVAS
Author / Creator:Nakamura, Haruko ; Doi, Hiroshi ; Mitsuhashi, Satomi ; Miyatake, Satoko ; Katoh, Kazutaka ; Frith, Martin C. ; Asano, Tetsuya ; Kudo, Yosuke ; Ikeda, Takuya ; Kubota, Shun ; Kunii, Misako ; Kitazawa, Yu ; Tada, Mikiko ; Okamoto, Mitsuo ; Joki, Hideto ; Takeuchi, Hideyuki ; Matsumoto, Naomichi ; Tanaka, Fumiaki
Publisher:England: Nature Publishing Group
Journal title:Journal of human genetics, 2020-05, Vol.65 (5), p.475-480
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ArticlesPeer ReviewedFull Text
A case report of an individual with Creutzfeldt–Jakob disease characterized by prolonged isolated thalamic lesions and rare MM2-cortical-type pathology
Author / Creator:Kunii, Misako ; Kishida, Hitaru ; Tada, Mikiko ; Okamoto, Mitsuo ; Asano, Keiichiro ; Nakamura, Haruko ; Takahashi, Keita ; Hashiguchi, Shunta ; Kubota, Shun ; Okubo, Masaki ; Takeuchi, Hideyuki ; Ueda, Naohisa ; Satoh, Katsuya ; Kitamoto, Tetsuyuki ; Doi, Hiroshi ; Tanaka, Fumiaki
Publisher:England: BioMed Central Ltd
Journal title:BMC neurology, 2024-11, Vol.24 (1), p.456-7, Article 456
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ArticlesPeer ReviewedFull Text
Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET
Author / Creator:Okamoto, Mitsuo ; Sometani, Mitsuru ; Harada, Shinsuke ; Yano, Hiroshi ; Okumura, Hajime
Publisher:Pfaffikon: Trans Tech Publications Ltd
Journal title:2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1
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ArticlesPeer ReviewedFull Text
Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance
Author / Creator:Kagoyama, Yohei ; Okamoto, Mitsuo ; Harada, Shinsuke ; Umeda, Takahide ; Arai, Ryo
Publisher:Pfaffikon: Trans Tech Publications Ltd
Journal title:Materials Science Forum, 2016-05, Vol.858, p.619-622
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ArticlesPeer ReviewedFull Text
Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
Author / Creator:Kada, Wataru ; Hanaizumi, Osamu ; Harada, Shinsuke ; Abe, Yuta ; Ohshima, Takeshi ; Umeda, Takahide ; Onoda, Shinobu ; Haruyama, Moriyoshi ; Okamoto, Mitsuo ; Kosugi, Ryoji
Publisher:Pfaffikon: Trans Tech Publications Ltd
Journal title:Materials science forum, 2018-06, Vol.924, p.281-284
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ArticlesPeer ReviewedFull Text
Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
Author / Creator:Ma, S.J. ; Harada, Shinsuke ; Ohshima, Takeshi ; Yoshioka, Hironori ; Umeda, Takahide ; Okamoto, Mitsuo ; Kim, Geon Woo ; Arai, Ryo ; Makino, Takahiro
Publisher:Pfaffikon: Trans Tech Publications Ltd
Journal title:Materials Science Forum, 2016-05, Vol.858, p.591-594
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ArticlesPeer ReviewedFull Text
The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET
Author / Creator:Umeda, Takahide ; Okamoto, Mitsuo ; Harada, Shinsuke ; Yamazaki, Yuichi ; Ohshima, Takeshi ; Abe, Yuta
Publisher:Pfaffikon: Trans Tech Publications Ltd
Journal title:Materials science forum, 2020-07, Vol.1004, p.361-366
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ArticlesPeer ReviewedFull Text
The A-Bomb Dome as World Heritage
Author / Creator:Mitsuo, Okamoto
Publisher:Tokyo: Asahi-Shimbun-Sha
Journal title:Japan quarterly, 1997-07, Vol.44 (3), p.40-47
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ArticlesPeer ReviewedFull Text
Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer
Author / Creator:Okumura, Hajime ; Okamoto, Mitsuo ; Tawara, Tae ; Harada, Shinsuke ; Iijima, Miwako ; Araoka, Tuyoshi ; Iwahashi, Yohei ; Kumazawa, Teruaki ; Kimura, Hiroshi ; Hamada, Kimimori ; Fujikake, Shinji
Publisher:Pfaffikon: Trans Tech Publications Ltd
Journal title:Materials science forum, 2019-07, Vol.963, p.469-472
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ArticlesFull Text
Dipole Scattering at the Interface: The Origin of Low Mobility observed in SiC MOSFETs
Author / Creator:Hatakeyama, Tetsuo ; Hirai, Hirohisa ; Simetani, Mitsuru ; Okamoto, Dai ; Okamoto, Mitsuo ; Harada, Shinsuke
Publisher:Ithaca: Cornell University Library, arXiv.org
Journal title:arXiv.org, 2022-01
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ArticlesFull Text
A 4.3-mOmegacm2, 1100-V normally-off IEMOSFET on SiC
Author / Creator:Harada, Shinsuke ; Okamoto, Mitsuo ; Yatsuo, Tsutomu ; Fukuda, Kenji ; Arai, Kazuo
Journal title:Electronics and communications in Japan, 2008-03, Vol.91 (3), p.9-14
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ArticlesFull Text
A 4.3−mΩcm 2 , 1100‐V normally‐off IEMOSFET on SiC
Author / Creator:Harada, Shinsuke ; Okamoto, Mitsuo ; Yatsuo, Tsutomu ; Fukuda, Kenji ; Arai, Kazuo
Journal title:Electronics and communications in Japan, 2008-03, Vol.91 (3), p.9-14
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ArticlesFull Text
A 4.3−mΩcm2, 1100-V normally-off IEMOSFET on SiC
Author / Creator:Harada, Shinsuke ; Okamoto, Mitsuo ; Yatsuo, Tsutomu ; Fukuda, Kenji ; Arai, Kazuo
Publisher:Hoboken: Wiley Subscription Services, Inc., A Wiley Company
Journal title:Electronics and communications in Japan, 2008-03, Vol.91 (3), p.9-14
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Ending the nuclear age
Author / Creator:Hodge, Clayton ; Okamoto, Mitsuo ; Morris Rossabi ; McFarland, Bob
Publisher:New York: Nation Company L.P
Journal title:The Nation (New York, N.Y.), 1998-04, Vol.266 (14), p.2
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ArticlesPeer ReviewedFull Text
III. Peace Research and Global Change
Author / Creator:Eide, Asbjørn ; Høivik, Tord ; Lodgaard, Sverre ; Skjelsbæk, Kjell ; Galtung, Johan ; Falk, Richard A. ; Falk, Richard D. ; Mendlowitz, Saul ; Curle, Adam ; Dedring, Juergen ; Eckhardt, William ; Thee, Marek ; Okamoto, Mitsuo P. ; Tamarin, Georges R. ; Boulding, Kenneth ; Boulding, Elise ; Mendlowitz, Saul H.
Publisher:Thousand Oaks, CA: Universitetsforlaget
Journal title:Bulletin of peace proposals, 1976-04, Vol.7 (2), p.146-170
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Long-read sequencing identifies the pathogenic nucleotide repeat expansion in RFC1 in a Japanese case of CANVAS

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A case report of an individual with Creutzfeldt–Jakob disease characterized by prolonged isolated thalamic lesions and rare MM2-cortical-type pathology

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Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET

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Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance

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Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

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Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

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The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET

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The A-Bomb Dome as World Heritage

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Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

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Dipole Scattering at the Interface: The Origin of Low Mobility observed in SiC MOSFETs

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A 4.3-mOmegacm2, 1100-V normally-off IEMOSFET on SiC

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A 4.3−mΩcm 2 , 1100‐V normally‐off IEMOSFET on SiC

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A 4.3−mΩcm2, 1100-V normally-off IEMOSFET on SiC

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Ending the nuclear age

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III. Peace Research and Global Change

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