Schottky barrier height dependence on the metal work function for p-type 4h-silicon carbide
Schottky barrier height dependence on the metal work function for p-type 4h-silicon carbide
About this item
Full title
Schottky barrier height dependence on the metal work function for p-type 4h-silicon carbide
Author / Creator
Publisher
New York, NY: Institute of Electrical and Electronics Engineers
Journal title
Journal of electronic materials, 2001-03, Vol.30 (3), p.242-246
Language
English
Formats
Publication information
Publisher
New York, NY: Institute of Electrical and Electronics Engineers
Subjects
More information
Alternative Titles
Full title
Schottky barrier height dependence on the metal work function for p-type 4h-silicon carbide
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_crossref_primary_10_1007_s11664_001_0023_1
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1007_s11664_001_0023_1
Other Identifiers
ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-001-0023-1
