Low thermal budget high-k/metal surface gate for buried donor-based devices
Low thermal budget high-k/metal surface gate for buried donor-based devices
About this item
Full title
Author / Creator
Publisher
Bristol: IOP Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Bristol: IOP Publishing
Subjects
More information
Scope and Contents
Contents
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly...
Alternative Titles
Full title
Low thermal budget high-k/metal surface gate for buried donor-based devices
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_crossref_primary_10_1088_2515_7639_ab953b
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1088_2515_7639_ab953b
Other Identifiers
ISSN
2515-7639
E-ISSN
2515-7639
DOI
10.1088/2515-7639/ab953b
