A silicon metal-oxide-semiconductor electron spin-orbit qubit
A silicon metal-oxide-semiconductor electron spin-orbit qubit
About this item
Full title
Author / Creator
Jock, Ryan M. , Jacobson, N. Tobias , Harvey-Collard, Patrick , Mounce, Andrew M. , Srinivasa, Vanita , Ward, Dan R. , Anderson, John , Manginell, Ron , Wendt, Joel R. , Rudolph, Martin , Pluym, Tammy , Gamble, John King , Baczewski, Andrew D. , Witzel, Wayne M. , Carroll, Malcolm S. and Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/
f
trap noise and variability in the electron
g
-factor due to spin–orbit (SO) effects. Here we advantageously use int...
Alternative Titles
Full title
A silicon metal-oxide-semiconductor electron spin-orbit qubit
Authors, Artists and Contributors
Author / Creator
Jacobson, N. Tobias
Harvey-Collard, Patrick
Mounce, Andrew M.
Srinivasa, Vanita
Ward, Dan R.
Anderson, John
Manginell, Ron
Wendt, Joel R.
Rudolph, Martin
Pluym, Tammy
Gamble, John King
Baczewski, Andrew D.
Witzel, Wayne M.
Carroll, Malcolm S.
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_17627a10d6ae4946a14c65fb8555a983
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_17627a10d6ae4946a14c65fb8555a983
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-018-04200-0
