CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits
1
. Fabricating transistors with ohmic contacts is a challenging task due to the formation of a high Schottky barrier that severely limits the performance of the tr...
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CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
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TN_cdi_doaj_primary_oai_doaj_org_article_32afbf5baca54735b781db8b4ad4fca2
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_32afbf5baca54735b781db8b4ad4fca2
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ISSN
2397-7132
E-ISSN
2397-7132
DOI
10.1038/s41699-024-00471-y
