Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multipersp...
Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy
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Publisher
London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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Contents
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microsco...
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Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy
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TN_cdi_doaj_primary_oai_doaj_org_article_362fef6038e248b0889ef427e785a31e
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_362fef6038e248b0889ef427e785a31e
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ISSN
2056-6387
E-ISSN
2056-6387
DOI
10.1038/s41534-024-00827-8
