An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access M...
An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
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New York: Springer US
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English
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New York: Springer US
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As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a r...
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An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array
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TN_cdi_doaj_primary_oai_doaj_org_article_3acceb29ffa7492ab61fa86bbe5f21b8
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_3acceb29ffa7492ab61fa86bbe5f21b8
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ISSN
1556-276X,1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-021-03569-0