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An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access M...

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access M...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_3acceb29ffa7492ab61fa86bbe5f21b8

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

About this item

Full title

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Publisher

New York: Springer US

Journal title

Nanoscale research letters, 2021-07, Vol.16 (1), p.114-114, Article 114

Language

English

Formats

Publication information

Publisher

New York: Springer US

More information

Scope and Contents

Contents

As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a r...

Alternative Titles

Full title

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_3acceb29ffa7492ab61fa86bbe5f21b8

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_3acceb29ffa7492ab61fa86bbe5f21b8

Other Identifiers

ISSN

1556-276X,1931-7573

E-ISSN

1556-276X

DOI

10.1186/s11671-021-03569-0

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