Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
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Publisher
United States: SpringerOpen
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Language
English
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United States: SpringerOpen
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Contents
A retention behavior model for self-rectifying TaO/HfO
- and TaO/AlO
-based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the...
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Full title
Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
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TN_cdi_doaj_primary_oai_doaj_org_article_3d97a3c18f384278bd773d0cc0904cb6
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_3d97a3c18f384278bd773d0cc0904cb6
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ISSN
1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-017-2179-5
