NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunct...
NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe
2
van der waal heterojunction (vdW HJ). A substantial in...
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NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
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TN_cdi_doaj_primary_oai_doaj_org_article_403b1b23c9414f8384e305fcb7bd19dc
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_403b1b23c9414f8384e305fcb7bd19dc
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-021-83187-z
