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ArticlesPeer ReviewedFull Text
NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
Author / Creator:Hussain, Muhammad ; Jaffery, Syed Hassan Abbas ; Ali, Asif ; Nguyen, Cong Dinh ; Aftab, Sikandar ; Riaz, Muhammad ; Abbas, Sohail ; Hussain, Sajjad ; Seo, Yongho ; Jung, Jongwan
Publisher:London: Nature Publishing Group UK
Journal title:Scientific reports, 2021-02, Vol.11 (1), p.3688-3688, Article 3688
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ArticlesPeer ReviewedFull Text
Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses
Author / Creator:Ali, Asif ; Abbas, Haider ; Hussain, Muhammad ; Jaffery, Syed Hassan Abbas ; Hussain, Sajjad ; Choi, Changhwan ; Jung, Jongwan
Publisher:Beijing: Tsinghua University Press
Journal title:Nano research, 2022-03, Vol.15 (3), p.2263-2277
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ArticlesPeer ReviewedFull Text
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching
Author / Creator:Dastgeer, Ghulam ; Afzal, Amir Muhammad ; Aziz, Jamal ; Hussain, Sajjad ; Jaffery, Syed Hassan Abbas ; Kim, Deok-kee ; Imran, Muhammad ; Assiri, Mohammed Ali
Publisher:Switzerland: MDPI AG
Journal title:Materials, 2021-12, Vol.14 (24), p.7535
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ArticlesPeer ReviewedFull Text
Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection
Author / Creator:Hussain, Muhammad ; Aftab Sikandar ; Jaffery Syed Hassan Abbas ; Ali, Asif ; Hussain Sajjad ; Cong Dinh Nguyen ; Akhtar Raheel ; Seo Yongho ; Eom Jonghwa ; Gautam Praveen ; Noh Hwayong ; Jung Jongwan
Publisher:London: Nature Publishing Group
Journal title:Scientific reports, 2020-06, Vol.10 (1)
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ArticlesPeer ReviewedFull Text
Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering
Author / Creator:Dastgeer, Ghulam ; Nisar, Sobia ; Shahzad, Zafar Muhammad ; Rasheed, Aamir ; Kim, Deok‐kee ; Jaffery, Syed Hassan Abbas ; Wang, Liang ; Usman, Muhammad ; Eom, Jonghwa
Publisher:Germany: John Wiley & Sons, Inc
Journal title:Advanced science, 2023-01, Vol.10 (1), p.e2204779-n/a
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ArticlesPeer ReviewedFull Text
Strong interlayer transition in a staggered gap GeSe/MoTe2 heterojunction diode for highly efficient visible and near‐infrared photodetection and logic inverter
Author / Creator:Jaffery, Syed Hassan Abbas ; Riaz, Muhammad ; Abbas, Zeesham ; Dastgeer, Ghulam ; Aftab, Sikandar ; Hussain, Sajjad ; Ali, Muhammad ; Jung, Jongwan
Publisher:Hoboken, USA: John Wiley & Sons, Inc
Journal title:EcoMat (Beijing, China), 2023-03, Vol.5 (3), p.n/a
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ArticlesPeer ReviewedFull Text
Highly Fast Response of Pd/Ta2O5/SiC and Pd/Ta2O5/Si Schottky Diode-Based Hydrogen Sensors
Author / Creator:Hussain, Muhammad ; Jeong, Woonyoung ; Kang, Il-Suk ; Choi, Kyeong-Keun ; Jaffery, Syed Hassan Abbas ; Ali, Asif ; Hussain, Tassawar ; Ayaz, Muhammad ; Hussain, Sajjad ; Jung, Jongwan
Publisher:MDPI
Journal title:Sensors (Basel, Switzerland), 2021-02, Vol.21 (4), p.1042
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ArticlesPeer ReviewedFull Text
Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
Author / Creator:Ali, Asif ; Kim, So-Young ; Hussain, Muhammad ; Jaffery, Syed Hassan Abbas ; Dastgeer, Ghulam ; Hussain, Sajjad ; Anh, Bach Thi Phuong ; Eom, Jonghwa ; Lee, Byoung Hun ; Jung, Jongwan
Publisher:Basel: MDPI AG
Journal title:Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3003
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ArticlesPeer ReviewedFull Text
Strong interlayer transition in a staggered gap GeSe / MoTe 2 heterojunction diode for highly efficient visible and near‐infrared photodetection and logic inverter
Author / Creator:Jaffery, Syed Hassan Abbas ; Riaz, Muhammad ; Abbas, Zeesham ; Dastgeer, Ghulam ; Aftab, Sikandar ; Hussain, Sajjad ; Ali, Muhammad ; Jung, Jongwan
Journal title:EcoMat (Beijing, China), 2023-03, Vol.5 (3)
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ArticlesPeer ReviewedFull Text
NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe 2 heterojunction diode
Author / Creator:Hussain, Muhammad ; Jaffery, Syed Hassan Abbas ; Ali, Asif ; Nguyen, Cong Dinh ; Aftab, Sikandar ; Riaz, Muhammad ; Abbas, Sohail ; Hussain, Sajjad ; Seo, Yongho ; Jung, Jongwan
Publisher:England
Journal title:Scientific reports, 2021-02, Vol.11 (1), p.3688
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ArticlesPeer ReviewedFull Text
Highly Fast Response of Pd/Ta 2 O 5 /SiC and Pd/Ta 2 O 5 /Si Schottky Diode-Based Hydrogen Sensors
Author / Creator:Hussain, Muhammad ; Jeong, Woonyoung ; Kang, Il-Suk ; Choi, Kyeong-Keun ; Jaffery, Syed Hassan Abbas ; Ali, Asif ; Hussain, Tassawar ; Ayaz, Muhammad ; Hussain, Sajjad ; Jung, Jongwan
Publisher:Switzerland
Journal title:Sensors (Basel, Switzerland), 2021-02, Vol.21 (4)
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NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

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Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

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Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

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Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

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Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering

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Strong interlayer transition in a staggered gap GeSe/MoTe2 heterojunction diode for highly efficient visible and near‐infrared photodetection and logic inverter

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Highly Fast Response of Pd/Ta2O5/SiC and Pd/Ta2O5/Si Schottky Diode-Based Hydrogen Sensors

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Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

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Strong interlayer transition in a staggered gap GeSe / MoTe 2 heterojunction diode for highly efficient visible and near‐infrared photodetection and logic inverter

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NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe 2 heterojunction diode

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Highly Fast Response of Pd/Ta 2 O 5 /SiC and Pd/Ta 2 O 5 /Si Schottky Diode-Based Hydrogen Sensors

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