A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
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New York: Springer US
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English
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New York: Springer US
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Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the stochastic oxygen vacancy generation/recombination is generally believed to be the dominant cause...
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A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
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TN_cdi_doaj_primary_oai_doaj_org_article_4ed9c5a0d4984ceaa86e2f0836e75173
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_4ed9c5a0d4984ceaa86e2f0836e75173
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ISSN
1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-018-2619-x
