Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells
Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells
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Cairo, Egypt: Hindawi Publishing Corporation
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Language
English
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Publisher
Cairo, Egypt: Hindawi Publishing Corporation
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Independent-Gate (IG) FinFET is a promising device in circuit applications due to its two separated gates, which can be used independently. In this paper, we proposed a comprehensive method to optimize the Dual Threshold (DT) IG FinFET devices by carrying out modulations for the gate electrode work function, oxide thickness, and silicon body thickn...
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Full title
Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells
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TN_cdi_doaj_primary_oai_doaj_org_article_686d21df4faa45caaa401a96aa6e8a69
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_686d21df4faa45caaa401a96aa6e8a69
Other Identifiers
ISSN
0882-7516
E-ISSN
1563-5031
DOI
10.1155/2018/4512924
