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A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension...

A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7f320af21ac5459d808cfed20add064a

A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension Control

About this item

Full title

A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension Control

Publisher

Switzerland: MDPI AG

Journal title

Sensors (Basel, Switzerland), 2024-11, Vol.24 (22), p.7144

Language

English

Formats

Publication information

Publisher

Switzerland: MDPI AG

More information

Scope and Contents

Contents

Silicon nanowires (SiNWs) have garnered considerable attention in the last few decades owing to their versatile applications. One extremely desirable aspect of fabricating SiNWs is controlling their dimensions and alignment. In addition, strict control of surface roughness or diameter modulation is another key parameter for enhanced performance in...

Alternative Titles

Full title

A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension Control

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_7f320af21ac5459d808cfed20add064a

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7f320af21ac5459d808cfed20add064a

Other Identifiers

ISSN

1424-8220

E-ISSN

1424-8220

DOI

10.3390/s24227144

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