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High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted P...

High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted P...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7f4ede97de154b4b9d05fd6c06cf4d86

High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted Perylene and Anthracene

About this item

Full title

High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted Perylene and Anthracene

Publisher

Germany: John Wiley & Sons, Inc

Journal title

Advanced science, 2023-05, Vol.10 (15), p.e2300530-n/a

Language

English

Formats

Publication information

Publisher

Germany: John Wiley & Sons, Inc

More information

Scope and Contents

Contents

Emissive organic semiconductors are highly demanding for organic light‐emitting transistors (OLETs) and electrically pumped organic lasers (EPOLs). However, it remains a great challenge to obtain organic semiconductors with high carrier mobility and high photoluminescence quantum yield simultaneously. Here, a new design strategy is reported for hig...

Alternative Titles

Full title

High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted Perylene and Anthracene

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_7f4ede97de154b4b9d05fd6c06cf4d86

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7f4ede97de154b4b9d05fd6c06cf4d86

Other Identifiers

ISSN

2198-3844

E-ISSN

2198-3844

DOI

10.1002/advs.202300530

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