Progress of InGaN-Based Red Micro-Light Emitting Diodes
Progress of InGaN-Based Red Micro-Light Emitting Diodes
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Basel: MDPI AG
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Language
English
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Publisher
Basel: MDPI AG
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Contents
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN red µLEDs exhibit a much more robust device performance even operating at a high temperature of up to...
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Full title
Progress of InGaN-Based Red Micro-Light Emitting Diodes
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TN_cdi_doaj_primary_oai_doaj_org_article_8f9495fbca4749bf97199bf80c52ec61
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_8f9495fbca4749bf97199bf80c52ec61
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ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst12040541
