RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line st...
RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography
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Stevenage: John Wiley & Sons, Inc
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English
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Stevenage: John Wiley & Sons, Inc
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This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. The authors have developed two different gate structures that were a field‐plated gate using the lift‐off pr...
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RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography
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TN_cdi_doaj_primary_oai_doaj_org_article_acd56a6c3924475d95f28c55cc4575c8
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_acd56a6c3924475d95f28c55cc4575c8
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ISSN
0013-5194
E-ISSN
1350-911X
DOI
10.1049/ell2.12798
