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Valley charge-transfer insulator in twisted double bilayer WSe2

Valley charge-transfer insulator in twisted double bilayer WSe2

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_aceb6073d7b540629debe71d97272736

Valley charge-transfer insulator in twisted double bilayer WSe2

About this item

Full title

Valley charge-transfer insulator in twisted double bilayer WSe2

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2025-01, Vol.16 (1), p.1185-7, Article 1185

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

In flat-band systems, emergent physics can be substantially modified by the presence of another nearby electronic band. For example, a Mott
˘
Hubbard insulator can turn into a charge transfer insulator if other electronic states enter between the upper and lower Hubbard bands. Here, we introduce twisted double bilayer (TDB) WSe
2
, with...

Alternative Titles

Full title

Valley charge-transfer insulator in twisted double bilayer WSe2

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_aceb6073d7b540629debe71d97272736

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_aceb6073d7b540629debe71d97272736

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/s41467-025-56490-w

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