Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier...
Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer
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Author / Creator
Yu, Qian , Shi, Chunzhou , Yang, Ling , Lu, Hao , Zhang, Meng , Zou, Xu , Wu, Mei , Hou, Bin , Gao, Wenze , Wu, Sheng , Ma, Xiaohua and Hao, Yue
Publisher
Switzerland: MDPI AG
Journal title
Language
English
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Publisher
Switzerland: MDPI AG
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Scope and Contents
Contents
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial structures, AlGaN/GaN/AlN/GaN (sub-AlN) HEMTs and Al...
Alternative Titles
Full title
Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_ae7df42a95984ea4b3cbfcfd488a4a44
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_ae7df42a95984ea4b3cbfcfd488a4a44
Other Identifiers
ISSN
2072-666X
E-ISSN
2072-666X
DOI
10.3390/mi15101220
