A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
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Basel: MDPI AG
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English
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Basel: MDPI AG
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This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology...
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A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
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TN_cdi_doaj_primary_oai_doaj_org_article_b5468add1201497084ae26f368eed17d
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_b5468add1201497084ae26f368eed17d
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ISSN
2076-3417
E-ISSN
2076-3417
DOI
10.3390/app10062183
