Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-s...
Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
About this item
Full title
Author / Creator
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of v...
Alternative Titles
Full title
Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_bab562941f6949abaf6ae4bb3d9ffcbf
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_bab562941f6949abaf6ae4bb3d9ffcbf
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-022-32380-3
