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Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Sta...

Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Sta...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_c2ee8b4b5b2741a8a4bd4e4de7570b74

Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells

About this item

Full title

Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells

Publisher

Basel: MDPI AG

Journal title

Crystals (Basel), 2023-04, Vol.13 (4), p.572

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

In this research, we compared the performance of commercial μ-LEDs and three-layered staggered QW μ-LED arrays. We also investigated the self-heating effect. We proposed a green micro-resonant cavity light-emitting diode (µ-RCLED) that consists of a three-layer staggered InGaN with multiple quantum wells (MQWs), a bottom layer of nanoporous n-GaN d...

Alternative Titles

Full title

Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_c2ee8b4b5b2741a8a4bd4e4de7570b74

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_c2ee8b4b5b2741a8a4bd4e4de7570b74

Other Identifiers

ISSN

2073-4352

E-ISSN

2073-4352

DOI

10.3390/cryst13040572

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