High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier
High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier
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Lin, Di , Kang, Wenyu , Wu, Qipeng , Song, Anke , Wu, Xuefeng , Liu, Guozhen , Wu, Jianfeng , Wu, Yaping , Li, Xu , Wu, Zhiming , Cai, Duanjun , Yin, Jun and Kang, Junyong
Publisher
New York: Springer US
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English
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Publisher
New York: Springer US
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Contents
Achieving high-efficient spin injection in semiconductors is critical for developing spintronic devices. Although a tunnel spin injector is typically used, the construction of a high-quality tunnel barrier remains a significant challenge due to the large lattice mismatch between oxides and semiconductors. In this work, van der Waals h-BN films with...
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Full title
High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier
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TN_cdi_doaj_primary_oai_doaj_org_article_fd43fdc27ae84eb89fd164b1592d94d3
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_fd43fdc27ae84eb89fd164b1592d94d3
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ISSN
1556-276X,1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-022-03712-5
