A Hybrid Nanomemristor/Transistor Logic Circuit Capable of Self-Programming
A Hybrid Nanomemristor/Transistor Logic Circuit Capable of Self-Programming
About this item
Full title
Author / Creator
Publisher
United States: National Academy of Sciences
Journal title
Language
English
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Publication information
Publisher
United States: National Academy of Sciences
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More information
Scope and Contents
Contents
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metaloxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to...
Alternative Titles
Full title
A Hybrid Nanomemristor/Transistor Logic Circuit Capable of Self-Programming
Authors, Artists and Contributors
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Primary Identifiers
Record Identifier
TN_cdi_jstor_primary_40421659
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_jstor_primary_40421659
Other Identifiers
ISSN
0027-8424
E-ISSN
1091-6490
DOI
10.1073/pnas.0806642106
