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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an...

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1830489

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

About this item

Full title

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Author / Creator

Shao, Qinghui , Jarrell, Joshua T. , Murphy, John M. , Frye, Clint D. , Henderson, Roger A. , Stoyer, Mark A. , Voss, Lars F. , Nikolic, Rebecca J. and Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Publisher

United States: Springer

Journal title

Journal of electronic materials, 2021-11, Vol.51

Language

English

Formats

Articles

Publication information

Publisher

United States: Springer

Subjects

More information

Alternative Titles

Full title

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Authors, Artists and Contributors

Author / Creator

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_osti_scitechconnect_1830489

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_1830489

Other Identifiers

ISSN

0361-5235

E-ISSN

1543-186X

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