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Newsletter articlesFull Text
INTERNATIONAL PATENT: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, SOCAL SIMULATIONS, LLC, SCHNEIDER, JOSEPH DEVIN, HARRISON, SARA, POVILUS, ALEXANDER PETER, CHAPIN, CAITLIN ANNE, GHANDIPARSI, SOROUSH,...
Publisher:Washington, D.C: HT Digital Streams Limited
Journal title:US Fed News Service, Including US State News, 2025
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ArticlesPeer ReviewedFull Text
Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors
Author / Creator:Ghandiparsi, Soroush ; Chatterjee, Bikram ; Shen, Jimmy‐Xuan ; Gottlieb, Miranda S. ; Frye, Clint D. ; Schneider, Joseph D. ; Muir, Ryan D. ; Buckley, Brandon W. ; Harrison, Sara E. ; Shao, Qinghui ; Varley, Joel B. ; Voss, Lars F.
Publisher:Weinheim: John Wiley & Sons, Inc
Journal title:Advanced materials interfaces, 2025-01, Vol.12 (2), p.n/a
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ArticlesPeer ReviewedFull Text
Demonstration of a Three-Dimensionally Structured Betavoltaic
Author / Creator:Murphy, John W. ; Frye, Clint D. ; Henderson, Roger A. ; Stoyer, Mark A. ; Voss, Lars F. ; Nikolic, Rebecca J.
Publisher:New York: Springer US
Journal title:Journal of electronic materials, 2021-03, Vol.50 (3), p.1380-1385
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ArticlesPeer ReviewedFull Text
Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System
Author / Creator:Shao, Qinghui ; Jarrell, Joshua T. ; Murphy, John M. ; Frye, Clint D. ; Henderson, Roger A. ; Stoyer, Mark A. ; Voss, Lars F. ; Nikolic, Rebecca J.
Publisher:New York: Springer US
Journal title:Journal of electronic materials, 2022-01, Vol.51 (1), p.350-355
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ArticlesFull Text
Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma
Author / Creator:Frye, Clint D ; Donald, Scott B ; Reinhardt, Catherine E ; Nikolic, Rebecca J ; Voss, Lars F ; Harrison, Sara E
Publisher:New York: Taylor & Francis Ltd
Journal title:Materials research letters, 2021-02, Vol.9 (2), p.105-111
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ArticlesPeer ReviewedFull Text
Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System
Author / Creator:Shao, Qinghui ; Jarrell, Joshua T. ; Murphy, John M. ; Frye, Clint D. ; Henderson, Roger A. ; Stoyer, Mark A. ; Voss, Lars F. ; Nikolic, Rebecca J.
Publisher:United States: Springer
Journal title:Journal of electronic materials, 2021-11, Vol.51
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ArticlesFull Text
Simulating Charged Defects at Database Scale
Author / Creator:Jimmy-Xuan Shen ; Voss, Lars F ; Joel Basile Varley
Publisher:Ithaca: Cornell University Library, arXiv.org
Journal title:arXiv.org, 2024-03
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ArticlesFull Text
Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma
Author / Creator:Frye, Clint D. ; Donald, Scott B. ; Reinhardt, Catherine E. ; Nikolic, Rebecca J. ; Voss, Lars F. ; Harrison, Sara E.
Journal title:Materials research letters, 2021-02, Vol.9 (2), p.105-111
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ArticlesFull Text
Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma
Author / Creator:Frye, Clint D. ; Donald, Scott B. ; Reinhardt, Catherine E. ; Nikolic, Rebecca J. ; Voss, Lars F. ; Harrison, Sara E.
Publisher:United Kingdom: Informa UK Limited
Journal title:Materials research letters, 2020-11, Vol.9 (2)
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ReportsFull Text
Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma
Author / Creator:Frye, Clint D. ; Donald, Scott B. ; Reinhardt, Catherine E. ; Nikolic, Rebecca J. ; Voss, Lars F. ; Harrison, Sara E.
Publisher:Taylor & Francis
Journal title:Materials Research Letters, 2021, Vol.9 (2), p.105-111
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INTERNATIONAL PATENT: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, SOCAL SIMULATIONS, LLC, SCHNEIDER, JOSEPH DEVIN, HARRISON, SARA, POVILUS, ALEXANDER PETER, CHAPIN, CAITLIN ANNE, GHANDIPARSI, SOROUSH,...

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

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Demonstration of a Three-Dimensionally Structured Betavoltaic

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

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Simulating Charged Defects at Database Scale

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Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

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Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

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