Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dyspros...
Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field
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Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
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Publisher
Moscow: Pleiades Publishing
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Scope and Contents
Contents
The degradation of the characteristics of silicon metal-oxide-semiconductor (MOS) structures with oxides of rare-earth elements under the effect of electric fields with intensities of 0.1–4 MV/cm during the course of electroforming is studied. A specific feature of electroforming consists in the possibility of multiple switching of the structures f...
Alternative Titles
Full title
Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field
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Record Identifier
TN_cdi_osti_scitechconnect_22469817
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22469817
Other Identifiers
ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782615080199
