DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K
DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K
About this item
Full title
Author / Creator
Endoh, A. , Watanabe, I. , Mimura, T. and Matsui, T.
Publisher
Stevenage: The Institution of Engineering and Technology
Journal title
Language
English
Formats
Publication information
Publisher
Stevenage: The Institution of Engineering and Technology
Subjects
More information
Scope and Contents
Contents
Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs have been fabricated in the gate length Lg range of 50 to 700 nm and their DC and RF characteristics measured at 300 and 16 K. The maximum drain‐source current Ids, the maximum transconductance gm_max and the cutoff frequency fT values increased at 16 K as expected. The ratios gm_max(16 K)/gm_max(300...
Alternative Titles
Full title
DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pascalfrancis_primary_26853731
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pascalfrancis_primary_26853731
Other Identifiers
ISSN
1350-911X,0013-5194
E-ISSN
1350-911X
DOI
10.1049/el.2012.4180
