Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si^sub 3^N^sub 4
Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si^sub 3^N^sub 4
About this item
Full title
Author / Creator
Seo, S , Cho, E and Pavlidis, D
Publisher
Stevenage: John Wiley & Sons, Inc
Journal title
Language
English
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Publisher
Stevenage: John Wiley & Sons, Inc
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Scope and Contents
Contents
The DC and RF characteristics of AlN/GaN metal insulator semiconductor field effect transistors (MISFET) on sapphire substrate, with in situ deposited Si^sub 3^N^sub 4^, is presented. A 2 nm-thick Si^sub 3^N^sub 4^ was in situ deposited directly on the AlN barrier layer by the same metal organic chemical vapour deposition system as the one used for...
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Full title
Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si^sub 3^N^sub 4
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Record Identifier
TN_cdi_proquest_journals_1626137240
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1626137240
Other Identifiers
ISSN
0013-5194
E-ISSN
1350-911X
