RF characteristics of 0.13-[micro]m NMOS transistors for millimeter-wave application
RF characteristics of 0.13-[micro]m NMOS transistors for millimeter-wave application
About this item
Full title
Author / Creator
Publisher
Bradford: Emerald Group Publishing Limited
Journal title
Language
English
Formats
Publication information
Publisher
Bradford: Emerald Group Publishing Limited
Subjects
More information
Scope and Contents
Contents
Purpose - The purpose of this paper is to present the high-frequency performance of 0.13-[micro]m n-type metal-oxide-semiconductor (NMOS) transistors with various multi-finger configurations for implementation in millimeter-wave (mm-wave) frequency. Design/methodology/approach - A folded-like double-gate transistor layout is designed to enable the...
Alternative Titles
Full title
RF characteristics of 0.13-[micro]m NMOS transistors for millimeter-wave application
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Record Identifier
TN_cdi_proquest_journals_1642191322
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1642191322
Other Identifiers
ISSN
1356-5362
E-ISSN
1758-812X
DOI
10.1108/MI-09-2013-0044
