Highly tunable exchange in donor qubits in silicon
Highly tunable exchange in donor qubits in silicon
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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In this article we have investigated the electrical control of the exchange coupling (
J
) between donor-bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We found that the asymmetric 2P–1P system provides a highly tunable exchange curve with mitigated J-o...
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Full title
Highly tunable exchange in donor qubits in silicon
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TN_cdi_proquest_journals_1787852970
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1787852970
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ISSN
2056-6387
E-ISSN
2056-6387
DOI
10.1038/npjqi.2016.8
