Amorphous In-Si-O Films Fabricated via Solution Processing
Amorphous In-Si-O Films Fabricated via Solution Processing
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Publisher
New York: Springer US
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Language
English
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New York: Springer US
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Contents
We report the characteristics of an amorphous oxide semiconductor In-Si-O fabricated via solution processing. In-Si-O thin films with nominal silicon concentration of 0 at.%, 1 at.%, 3 at.%, 5 at.%, 9 at.%, 50 at.%, and 100 at.% were fabricated via spin coating. The films were characterized via thermal desorption spectroscopy (TDS), x-ray reflectiv...
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Full title
Amorphous In-Si-O Films Fabricated via Solution Processing
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TN_cdi_proquest_journals_1899617955
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1899617955
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-017-5506-9
