Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Usin...
Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer
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Author / Creator
Publisher
New York: Springer US
Journal title
Language
English
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Publication information
Publisher
New York: Springer US
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Scope and Contents
Contents
A Ti/Orange G/
p
-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/
p
-InP metal/semiconductor (MS) and Ti/OG/
p
-InP MIS junctions have been analyzed based on current–voltage (
I
–
...
Alternative Titles
Full title
Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer
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Author / Creator
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Record Identifier
TN_cdi_proquest_journals_1934218299
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1934218299
Other Identifiers
ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-017-5611-9
